PARAMETER

Collector-Base breakdown voltage

Collector-Emitter

voltage(3)

breakdown

Emitter-Base

voltage

breakdown

Base cutoff current

CONDITIONS

Symbol

V

(BR)CBO

V

CEO

(BR)

V

EBO

(BR)

I

BL

I

CEX

MIN.

TYP.

MAX.

-40

-40

-5.0

-50

UNIT

V

V

V

nA

-50

Formosa MS

o

A

Off characteristics

I = -10uA, I = 0

c

E

I = -1mA, I = 0

c

B

I = -10uA, I = 0

c

C

Collector cutoff current

V

= -30Vdc, V

= -3.0Vdc

CE

EB

V

= -30Vdc, V

= -3.0Vdc

CE

EB

3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.

PARAMETER

DC current gain

CONDITIONS

Symbol

h

FE

MIN.

TYP.

MAX.

60

80

100

60

UNIT

-

Vdc

30

On characteristics(3)

I = -0.1mA, V

= -1.0V

c

CE

I = -1.0mA, V

= -1.0V

c

CE

I = -10mA, V

= -1.0V

c

CE

I = -50mA, V

= -1.0V

c

CE

I = -100mA, V

= -1.0V

c

CE

Collector-Emitter saturation voltage(3)

Base-Emitter saturation voltage(3)

I = -10mA, I = -1.0mA

c

B

I = -50mA, I = -5.0mA

c

B

I = -10mA, I = -1.0mA

c

B

I = -50mA, I = -5.0mA

c

B

Vdc

-0.25

-0.40

-0.85

-0.95

-0.65

V

CE(sat)

V

BE(sat)

PARAMETER

Input capacitance

CONDITIONS

Symbol

C

ibo

MIN.

TYP.

MAX.

250

4.5

10

2.0

UNIT

-

0.1

Small-signal characteristics

I = -10mA, V

= -20V, f = 100MHz

C

CE

Output admittance

V

= -5.0V, I = -100uA, RS = 1.0K ohms, f = 1.0KHz

CE

C

dB

400

60

4.0

h

fe

NF

Current-gain-bandwidth product(4)

Output capacitance

Input impedance

Voltage feeback radio

Small-signal current gain

Noise figure

V

= -5.0V, I = 0, f = 1.0MHz

CB

E

V

= -0.5V, I = 0, f = 1.0MHz

EB

C

V

= -10A, I = -1.0mA, f = 1.0KHz

CE

C

V

= -10V, I = -1.0mA, f = 1.0KHz

CE

C

V

= -10V, I = -1.0mA, f = 1.0KHz

CE

C

V

= -10V, I = -1.0mA, f = 1.0KHz

CE

C

f

T

C

obo

h

ie

h

re

h

oe

12

10.0

100

3.0

-4

X 10

umhos

pF

kohms

MHz

pF

Page 3

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

PARAMETER

Storage time

CONDITIONS

Symbol

ts

MIN.

TYP.

MAX.

35

225

UNIT

Switching characteristics

Delay time

Rise time

Fall time

V

= -3.0V, V

= 0.5V, I = -10mA, I

= -1.0mA

CC

BE

C

B1

td

tr

tf

75

V

= -3.0V, I =-10mA, I

= I

= -1.0mA

CC

C

B1

B2

ns

35

4.f is defined as the frequency at which h extrapolates to unity.

T

fe

FMBT3906W

300

5. Pulse Test: Pulse Width <=300µs, Duty cycle«=2.0%

Document ID

Issued Date

Revised Date

Revision

Page.

DS-231132

2009/08/10

2010/03/10

B

10

SMD PNP Transistor