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74HC2G32 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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74HC2G32 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 19 page 2003 Oct 30 2 Philips Semiconductors Product specification Dual 2-input OR gate 74HC2G32; 74HCT2G32 FEATURES • Wide supply voltage range from 2.0 to 6.0 V • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • Very small 8 pins package • Output capability: standard • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. DESCRIPTION The 74HC2G/HCT2G32 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G32 provides the dual 2-input OR function. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 6.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For 74HC2G32: the condition is VI = GND to VCC. For 74HCT2G32: the condition is VI = GND to VCC − 1.5 V. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC2G32 HCT2G32 tPHL/tPLH propagation delay nA, nB to nY CL = 50 pF; VCC = 4.5 V 9 13 ns CI input capacitance 1.5 1.5 pF CPD power dissipation capacitance per gate notes 1 and 2 10 11 pF |
Numéro de pièce similaire - 74HC2G32 |
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Description similaire - 74HC2G32 |
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