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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SD106WS Fiches technique(PDF) 1 Page - Diode Semiconductor Korea |
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SD106WS Fiches technique(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 3 page  Silicon Epitaxial Planar Diode SD106WS FEATURES Pb Lead-free Low turn-on voltage. Fast switching. This device is protected by a PN junction guard ring against excessive voltage,such as electrostatic discharge. Ideal for precaution of MOS device ,steering ,biasing , and coupling diodes for fast switching and low logic level application. Microminiature plastic package. SOD-323 APPLICATIONS High speed switching ORDERING INFORMATION Type No. Marking Package Code SD106WS S21 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 30 V Peak forward Current IFM 200 mA Forward surge current tp=10ms IFSM 1 A Power dissipation Ptot 250 mW Thermal resistance junction to ambient air TθjA 500 ℃ /W Junction temperature Tj 150 ℃ Storage temperature TSTG -65~+150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Diode Semiconductor Korea www.diode.kr |
Numéro de pièce similaire - SD106WS |
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Description similaire - SD106WS |
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