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IRFF120 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFF120
Description  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFF120 Fiches technique(HTML) 2 Page - International Rectifier

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IRFF120
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
6.25
RthJA
Junction-to-Ambient
175
Typical socket mount.
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
6.0
ISM
Pulse Source Current (Body Diode) ➀
——
2 4
VSD
Diode Forward Voltage
1.8
V
Tj = 25°C, IS =6.0A, VGS = 0V ➃
trr
Reverse Recovery Time
240
nS
Tj = 25°C, IF = 6.0A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
2.0
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
1 00
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.10
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.30
VGS = 10V, ID = 3.5A ➃
Resistance
0.345
VGS =10V, ID = 6.0A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
1.5
S
VDS > 15V, IDS = 3.5A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS= 80V, VGS=0V
250
µA
VDS = 80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
1 0 0
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
nA
VGS = -20V
Qg
Total Gate Charge
7.7
1 7
VGS =10V, ID = 6.0A
Qgs
Gate-to-Source Charge
0.7
4.0
nC
VDS= 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
2.0
7.7
td(on)
Turn-On Delay Time
4 0
VDD = 50V, ID = 6.0A,
t r
Rise Time
7 0
RG = 7.5Ω
td(off)
Turn-Off Delay Time
4 0
tf
Fall Time
7 0
LS + LD
Total Inductance
7.0
Ciss
Input Capacitance
350
VGS = 0V, VDS = 25V
Coss
Output Capacitance
150
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
2 4
nH
ns
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)


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