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BAT54ST Fiches technique(PDF) 1 Page - Diode Semiconductor Korea |
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BAT54ST Fiches technique(HTML) 1 Page - Diode Semiconductor Korea |
1 / 3 page Surface Mount Schottky Barrier Diode BAT54T/AT/CT/ST FEATURES Low forward voltage drop. Fast switching. Ultra-small surface mount package. BAT54T BAT54AT PN junction guard ring for transient and ESD protection. BAT54CT BAT54ST APPLICATIONS Schottky barrier diodes. SOT-523 ORDERING INFORMATION Type No. Marking Package Code BAT54T L1 SOT-523 BAT54AT L2 SOT-523 BAT54CT L3 SOT-523 BAT54ST L4 SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VRRM VRWM VR Peak repetitive reverse voltage Working peak reverse voltage DC reverse voltage 30 V IF Forward continuous voltage 200 mA IFRM Repetitive peak forward voltage 300 mA IFSM Non-repetitive peak forward surge current @t<1.0s 600 mA Pd Power dissipation 150 mW RθJA Thermal resistance junction to ambient 833 ℃ /W Tj,Tstg Junction and Storage Temperature -65~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr |
Numéro de pièce similaire - BAT54ST |
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Description similaire - BAT54ST |
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