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1SS401 Fiches technique(PDF) 1 Page - Diode Semiconductor Korea |
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1SS401 Fiches technique(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page Schottky Barrier Diode 1SS401 FEATURES Small total capacitance. Low reverse current. Low forward voltage:VF=0.38V(typ). APPLICATIONS For general purpose applications. SOT-323 ORDERING INFORMATION Type No. Marking Package Code 1SS401 D9 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 25 V Diode reverse voltage VR 20 V Forward continuous Current IF 700 mA Average rectified output current IO 300 mA Power Dissipation Pd 100 mW Junction temperature Tj 125 ℃ Storage temperature range Tstg -55-+125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Typ. MAX UNIT Reverse breakdown voltage V(BR)R IR=100μA 20 V Reverse current IR VR=20V 50 μA Forward voltage VF IF=1mA IF=10mA IF=300mA 0.16 0.22 0.38 0.45 V Diode capacitance CD VR=0V, f=1MHz 46 pF Pb Lead-free Diode Semiconductor Korea www.diode.kr |
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