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UC27221 Fiches technique(PDF) 1 Page - Texas Instruments

No de pièce UC27221
Description  HIGH-EFFICIENCY PREDICTIVE SYNCHRONOUS BUCK DRIVER
Download  34 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

UC27221 Fiches technique(HTML) 1 Page - Texas Instruments

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UCC27221
UCC27222
SLUS486B − AUGUST 2001 − REVISED JULY 2003
HIGHEFFICIENCY PREDICTIVE SYNCHRONOUS BUCK DRIVER
1
www.ti.com
FEATURES
D Maximizes Efficiency by Minimizing
Body-Diode Conduction and Reverse
Recovery Losses
D Transparent Synchronous Buck Gate Drive
Operation From the Single Ended PWM Input
Signal
D 12-V or 5-V Input Operation
D 3.3-V Input Operation With Availability of
12-V Bus Bias
D On-Board 6.5-V Gate Drive Regulator
D ±3.3-A TrueDrive Gate Drives for High
Current Delivery at MOSFET Miller
Thresholds
D Automatically Adjusts for Changing
Operating Conditions
D Thermally Enhanced 14-Pin PowerPAD
HTSSOP Package Minimizes Board Area and
Junction Temperature Rise
APPLICATIONS
D Non-Isolated Single or Multi-phased
DC-to-DC Converters for Processor Power,
General Computer, Telecom and Datacom
Applications
DESCRIPTION
The UCC27221 and UCC27222 are high-speed
synchronous
buck
drivers
for
today’s
high-efficiency, lower-output voltage designs.
Using Predictive Gate Drive
t (PGD) control
technology,
these
drivers
reduce
diode
conduction and reverse recovery losses in the
synchronous
rectifier
MOSFET(s).
The
UCC27221 has an inverted PWM input while the
UCC27222 has a non-inverting PWM input.
Predictive Gate Drive
t technology uses control
loops which are stabilized internally and are
therefore transparent to the user. These loops use
no external components, so no additional design
is needed to take advantage of the higher
efficiency of these drivers.
This closed loop feedback system detects
body-diode conduction, and adjusts deadtime
delays to minimize the conduction time interval.
This virtually eliminates body-diode conduction
while adjusting for temperature, load- dependent
delays, and for different MOSFETs. Precise gate
timing at the nanosecond level reduces the
reverse recovery time of the synchronous rectifier
MOSFET body-diode, reducing reverse recovery
losses seen in the main (high-side) MOSFET. The
lower junction temperature in the low-side
MOSFET increases product reliability. Since the
power dissipation is minimized, a higher switching
frequency can also be used, allowing for smaller
component sizes.
The UCC27221 and UCC27222 are offered in the
thermally enhanced 14-pin PowerPAD
t package
with 2
°C/W θjc.
7
6,8
3
4,5
IN
GND
VDD
VLO
14
13
11,12
9,10
VHI
G1
SW
G2
UCC27222
PWMIN
VIN
GNDOUT
VOUT
GNDIN
FUNCTIONAL APPLICATION DIAGRAM
Note: 12-V input system shown. For 5-V input only systems, see Figure 6.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
 2002, Texas Instruments Incorporated
Predictive Gate Drive
t and PowerPADt are trademarks of Texas Instruments Incorporated.
UCC27221
Not Recommended For New Designs


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