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UC27221 Fiches technique(PDF) 1 Page - Texas Instruments |
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UC27221 Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 34 page UCC27221 UCC27222 SLUS486B − AUGUST 2001 − REVISED JULY 2003 HIGHEFFICIENCY PREDICTIVE SYNCHRONOUS BUCK DRIVER 1 www.ti.com FEATURES D Maximizes Efficiency by Minimizing Body-Diode Conduction and Reverse Recovery Losses D Transparent Synchronous Buck Gate Drive Operation From the Single Ended PWM Input Signal D 12-V or 5-V Input Operation D 3.3-V Input Operation With Availability of 12-V Bus Bias D On-Board 6.5-V Gate Drive Regulator D ±3.3-A TrueDrive Gate Drives for High Current Delivery at MOSFET Miller Thresholds D Automatically Adjusts for Changing Operating Conditions D Thermally Enhanced 14-Pin PowerPAD HTSSOP Package Minimizes Board Area and Junction Temperature Rise APPLICATIONS D Non-Isolated Single or Multi-phased DC-to-DC Converters for Processor Power, General Computer, Telecom and Datacom Applications DESCRIPTION The UCC27221 and UCC27222 are high-speed synchronous buck drivers for today’s high-efficiency, lower-output voltage designs. Using Predictive Gate Drive t (PGD) control technology, these drivers reduce diode conduction and reverse recovery losses in the synchronous rectifier MOSFET(s). The UCC27221 has an inverted PWM input while the UCC27222 has a non-inverting PWM input. Predictive Gate Drive t technology uses control loops which are stabilized internally and are therefore transparent to the user. These loops use no external components, so no additional design is needed to take advantage of the higher efficiency of these drivers. This closed loop feedback system detects body-diode conduction, and adjusts deadtime delays to minimize the conduction time interval. This virtually eliminates body-diode conduction while adjusting for temperature, load- dependent delays, and for different MOSFETs. Precise gate timing at the nanosecond level reduces the reverse recovery time of the synchronous rectifier MOSFET body-diode, reducing reverse recovery losses seen in the main (high-side) MOSFET. The lower junction temperature in the low-side MOSFET increases product reliability. Since the power dissipation is minimized, a higher switching frequency can also be used, allowing for smaller component sizes. The UCC27221 and UCC27222 are offered in the thermally enhanced 14-pin PowerPAD t package with 2 °C/W θjc. 7 6,8 3 4,5 IN GND VDD VLO 14 13 11,12 9,10 VHI G1 SW G2 UCC27222 PWMIN VIN GNDOUT VOUT GNDIN FUNCTIONAL APPLICATION DIAGRAM Note: 12-V input system shown. For 5-V input only systems, see Figure 6. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 2002, Texas Instruments Incorporated Predictive Gate Drive t and PowerPADt are trademarks of Texas Instruments Incorporated. UCC27221 Not Recommended For New Designs |
Numéro de pièce similaire - UC27221 |
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Description similaire - UC27221 |
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