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IRF034 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF034
Description  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF034 Fiches technique(HTML) 2 Page - International Rectifier

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IRF034
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1.67
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
2 5
ISM
Pulse Source Current (Body Diode) ➀
100
VSD
Diode Forward Voltage
1.8
V
Tj = 25°C, IS = 25A, VGS = 0V ➃
trr
Reverse Recovery Time
220
nS
Tj = 25°C, IF = 25A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
9.6
µc
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
6 0
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.68
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.050
VGS = 10V, ID = 16A➃
Resistance
0.058
VGS =10V, ID =25A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
9.3
S ( )VDS > 15V, IDS =16A➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS=48V, VGS=0V
250
VDS =48V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
21
4 7
VGS =10V, ID= 25A
Qgs
Gate-to-Source Charge
4.4
1 0
nC
VDS =30V
Qgd
Gate-to-Drain (‘Miller’) Charge
9.7
2 2
td(on)
Turn-On Delay Time
2 1
VDD =30V, ID = 25A,
t r
Rise Time
1 1 0
RG =7.5Ω
td(off)
Turn-Off Delay Time
5 3
tf
Fall Time
8 0
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
1300
VGS = 0V, VDS = 25V
Coss
Output Capacitance
650
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
100
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)


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