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1N17 Datasheet(Fiches technique) 1 Page - Diode Semiconductor Korea

Numéro de pièce 1N17
Description  SCHOTTKY BARRIER RECTIFIERS
Télécharger  2 Pages
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Fabricant  DSK [Diode Semiconductor Korea]
Site Internet  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

1N17 Datasheet(HTML) 1 Page - Diode Semiconductor Korea

  1N17 Datasheet HTML 1Page - Diode Semiconductor Korea 1N17 Datenblatt HTML 2Page - Diode Semiconductor Korea  
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FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
MECHANICAL DATA
Case:JEDEC R--1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UNITS
Maximum recurrent peak reverse voltage
VRRM
V
Maximum RMS voltage
VRMS
V
Maximum DC blocking voltage
VDC
V
Maximum average forw ard rectified current
9.5mm lead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J=70
Maximum reverse current
@T
A=25
at rated DC blocking voltage
@T
A=100
Typical junction capacitance
(Note2)
CJ
pF
Typical thermal resistance
(Note3)
RθJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
1N17---1N19
A
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
IF(AV)
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
R - 1
The plastic material carries U/L recognition 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
IN17
3.Thermal resistance junction to ambient
mA
IR
IFSM
NOTE: 1. Pulse test : 300
s pulse width,1% duty cy cle.
2. Measured at 1.0MH
Z and applied rev erse v oltage of 4. 0V DC.
A
50
- 55 ---- + 125
- 55 ---- + 150
110
1.0
10.0
1.0
40
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
@ 3.0A
VF
14
20
V
IN18
IN19
40
28
30
21
30
25.0
20
0.90
0.60
0.45
0.75
0.55
0.875
Dimensions in millimeters
Diode Semiconductor Korea
www.diode.kr


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