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SI4559EY Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI4559EY Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si4559EY Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70167 S-57253—Rev. D, 24-Feb-98 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA N-Ch 1 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA P-Ch –1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V N-Ch "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V P-Ch "100 nA ZG V l D i C I VDS = 60 V, VGS = 0 V N-Ch 2 A Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V P-Ch –2 mA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 55_C N-Ch 25 mA VDS = –60 V, VGS = 0 V, TJ = 55_C P-Ch –25 On-State Drain Currentb ID(on) VDS w 5 V, VGS = 10 V N-Ch 20 A On-State Drain Currentb ID(on) VDS v –5 V, VGS = –10 V P-Ch –20 A DiS OS R i b VGS = 10 V, ID = 4.5 A N-Ch 0.045 0.055 W Drain-Source On-State Resistanceb rDS(on) VGS = –10 V, ID = –3.1 A P-Ch 0.100 0.120 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 3.9 A N-Ch 0.055 0.075 W VGS = –4.5 V, ID = –2.8 A P-Ch 0.125 0.150 Forward Transconductanceb gfs VDS = 15 V, ID = 4.5 A N-Ch 13 S Forward Transconductanceb gfs VDS = –15 V, ID = –3.1 A P-Ch 7.5 S Diode Forward Voltageb VSD IS = 2.0 A, VGS = 0 V N-Ch 0.9 1.2 V Diode Forward Voltageb VSD IS = –2.0 A, VGS = 0 V P-Ch –0.8 –1.2 V Dynamica Total Gate Charge Qg NCh l N-Ch 19 30 C Total Gate Charge Qg N-Channel V 30 V V 10 V I 4 5 A P-Ch 16 25 C Gate-Source Charge Qgs VDS = 30 V, VGS = 10 V, ID = 4.5 A N-Ch 4 nC Gate-Source Charge Qgs P-Channel VDS = –30 V, VGS = –10 V P-Ch 4 nC Gate-Drain Charge Qgd VDS = –30 V, VGS = –10 V ID = –3.1A N-Ch 3 Gate-Drain Charge Qgd P-Ch 1.6 Turn-On Delay Time td(on) NCh l N-Ch 13 20 Turn-On Delay Time td(on) NCh l P-Ch 8 15 Rise Time tr N-Channel VDD = 30 V, RL = 30 W N-Ch 11 20 Rise Time tr VDD = 30 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Ch 10 20 Turn-Off Delay Time td(off) P-Channel V30 V R 30 W N-Ch 36 60 ns Turn-Off Delay Time td(off) VDD = –30 V, RL = 30 W ID ^ –1 A, VGEN = –10 V, RG = 6 W P-Ch 12 25 ns Fall Time tf ID 1 A, VGEN 10 V, RG 6 W N-Ch 11 20 Fall Time tf P-Ch 35 50 Source-Drain Reverse Recovery Time trr IF = 2 A, di/dt = 100 A/ms N-Ch 35 60 Source-Drain Reverse Recovery Time trr IF = –2 A, di/dt = 100 A/ms P-Ch 60 90 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. |
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