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1N4007G Fiches technique(PDF) 1 Page - Diode Semiconductor Korea

No de pièce 1N4007G
Description  GLASS PASSIVATED RECTIFIERS
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Fabricant  DSK [Diode Semiconductor Korea]
Site Internet  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

1N4007G Fiches technique(HTML) 1 Page - Diode Semiconductor Korea

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FEATURES
The plastic package carries underwrites laboratory
flammability classification 94V-O
Low reverse leakage
High current capability
Low forward voltage drop
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
UNITS
Maximumrecurrent peak reverse voltage
VRRM
200
400
600
800
1000
V
MaximumRMS voltage
VRMS
140
280
420
560
700
V
MaximumDC blocking voltage
VDC
200
400
600
800
1000
V
Maximumaverage forw ard rectified current
9.5mmlead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J=125
Maximuminstantaneous forw ard voltage
at 1.0 A
VF
V
Maximumreverse current
@T
A=25
at rated DC blocking voltage @T
A=100
Typical junction capacitance
(Note)
CJ
pF
Operating junction temperature range
TJ
Storage temperature range
TSTG
1N4001G --- 1N4007G
100
70
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
DO - 41
GLASS PASSIVATED RECTIFIERS
50
100
NOTE: Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.
- 55 ---- +
175
- 55 ---- + 175
IR
50.0
A
15
A
A
Glass passivated junction
IF(AV)
1.0
IFSM
High temperature soldering guaranteed:
vvvvv350 /10 seconds, 0.375"(9.5mm) lead length,
wwc5lbs, (2.3kg) tension
35
1N
4001G
1N
4002G
1.1
5.0
50
30
Dimensions in millimeters
Diode Semiconductor Korea
www.diode.kr


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