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SN74AUP1G08DSF Fiches technique(PDF) 5 Page - Texas Instruments

No de pièce SN74AUP1G08DSF
Description  Low-Power Single 2-Input Positive-AND Gate
Download  38 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

SN74AUP1G08DSF Fiches technique(HTML) 5 Page - Texas Instruments

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SN74AUP1G08
www.ti.com
SCES502P – NOVEMBER 2003 – REVISED JUNE 2016
Product Folder Links: SN74AUP1G08
Submit Documentation Feedback
Copyright © 2003–2016, Texas Instruments Incorporated
Pin Functions
PIN
I/O
DESCRIPTION
NAME
DRL, DCK,
DBV
DPW
DRY, DSF
YZP
YFP
A
1
2
1
A1
A1
I
Input A
B
2
1
2
B1
B1
I
Input B
DNU
B2
Do not use
GND
3
3
3
C1
C1
Ground
N.C.
5
No internal connection
VCC
5
5
6
A2
A2
Power Pin
Y
4
4
4
C2
C2
O
Output Y
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Supply voltage
–0.5
4.6
V
VI
Input voltage(2)
–0.5
4.6
V
VO
Voltage range applied to any output in the high-impedance or power-off state (2)
–0.5
4.6
V
VO
Output voltage range in the high or low state(2)
–0.5
VCC + 0.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±20
mA
Continuous current through VCC or GND
±50
mA
TJ
Maximum junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
2000
V
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
1000
(1)
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Supply voltage
0.8
3.6
V
VIH
High-level input voltage
VCC = 0.8 V
VCC
V
VCC = 1.1 V to 1.95 V
0.65 × VCC
VCC = 2.3 V to 2.7 V
1.6
VCC = 3 V to 3.6 V
2


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