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SI4980DY-T1 Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI4980DY-T1 Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si4980DY Vishay Siliconix www.vishay.com 2-4 Document Number: 70646 S-03950—Rev. D, 26-May-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) TJ - Temperature (_C) Time (sec) 0.00 0.05 0.10 0.15 0.20 0 2468 10 - 1.0 - 0.5 0.0 0.5 1.0 - 50 - 25 0 25 50 75 100 125 150 TJ = 150_C TJ = 25_C ID = 3.7 A ID = 250 mA 20 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 0.01 0.10 1.00 10.00 2 1 0.1 0.01 10-4 10-3 10-2 10-1 110 30 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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