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SS2509-RESTT Fiches technique(PDF) 2 Page - SEC Electronics Inc. |
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SS2509-RESTT Fiches technique(HTML) 2 Page - SEC Electronics Inc. |
2 / 8 page SS2509-R Hall Latch - High Sensitivity 2 V3.10 Dec 1, 2014 Glossary of Terms MilliTesla (mT), Gauss Units of magnetic flux density: 1mT = 10 Gauss RoHS Restriction of Hazardous Substances TSOT Thin Small Outline Transistor (TSOT package) - also referred with the package code “ST” ESD Electro-Static Discharge BLDC Brush-Less Direct-Current Operating Point (BOP) Magnetic flux density applied on the branded side of the package which turns the output driver ON (VOUT = VDSon) Release Point (BRP) Magnetic flux density applied on the branded side of the package which turns the output driver OFF (VOUT = high) Unique Features Based on mixed signal CMOS technology, SS2509-R is a Hall-effect device with high magnetic sensitivity. This multi-purpose latch meets most of the application requirements. The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics and enables faster and more precise design. The wide operating voltage from 3.5V to 24V, low current consumption and large choice of operating temperature range according to “L”, and “E” specification make this device suitable for automotive, industrial and consumer applications. Pin Definitions and Descriptions TSOT Pin № SIP Pin № Name Type Function 1 1 VDD Supply Supply Voltage pin 2 3 OUT Output Open Drain Output pin 3 2 GND Ground Ground pin |
Numéro de pièce similaire - SS2509-RESTT |
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Description similaire - SS2509-RESTT |
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