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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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FDD8874 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDD8874 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  ©2004 Fairchild Semiconductor Corporation FDD8874 / FDU8874 Rev.B Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Package current limitation is 35A. 2: Starting TJ = 25°C, L = 0.61mH, I AS = 28A, VDD = 27V, VGS = 10V. Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, V GS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, I D = 250µA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 35A, V GS = 10V - 0.0042 0.0051 Ω ID = 35A, V GS = 4.5V - 0.0052 0.0064 ID = 35A, V GS = 10V, TJ = 175 oC - 0.0069 0.0083 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 2990 - pF COSS Output Capacitance - 585 - pF CRSS Reverse Transfer Capacitance - 340 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 2.0 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V V DD = 15V ID = 35A Ig = 1.0mA - 54 72 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 29 38 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 3.0 4.0 nC Qgs Gate to Source Gate Charge - 8.0 - nC Qgs2 Gate Charge Threshold to Plateau - 5.0 - nC Qgd Gate to Drain “Miller” Charge - 10 - nC tON Turn-On Time VDD = 15V, I D = 35A VGS = 10V, R GS = 4.7Ω - - 156 ns td(ON) Turn-On Delay Time - 9 - ns tr Rise Time - 96 - ns td(OFF) Turn-Off Delay Time - 47 - ns tf Fall Time - 37 - ns tOFF Turn-Off Time - - 126 ns VSD Source to Drain Diode Voltage ISD = 35A - - 1.25 V ISD = 15A - - 1.0 V trr Reverse Recovery Time ISD = 35A, dISD /dt = 100A/µs - - 32 ns QRR Reverse Recovered Charge ISD = 35A, dISD /dt = 100A/µs - - 18 nC |
Numéro de pièce similaire - FDD8874 |
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Description similaire - FDD8874 |
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