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AD0345BS8500RF Fiches technique(PDF) 28 Page - Texas Instruments |
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AD0345BS8500RF Fiches technique(HTML) 28 Page - Texas Instruments |
28 / 61 page SMJ320C6701-SP SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 www.ti.com Electrical Characteristics over recommended ranges of supply voltage and operating case temperature (unless otherwise noted) (unchanged after 100 kRad) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH High-level output voltage DVDD = MIN, IOH = MAX 2.4 V VOL Low-level output voltage DVDD = MIN, IOL = MAX 0.6 V II Input current(1) VI = VSS to DVDD ±10 μA IOZ Off-state output current VO = DVDD or 0 V ±10 μA Supply current, CPU + CPU memory IDD2V CVDD = NOM, CPU clock = 150 MHz 470 mA access(2) IDD2V Supply current, peripherals(3) CVDD = NOM, CPU clock = 150 MHz 250 mA IDD3V Supply current, I/O pins(4) DVDD = NOM, CPU clock = 150 MHz 85 mA Ci Input capacitance 15(5) pF Co Output capacitance 15(5) pF (1) TMS and TDI are not included due to internal pullups. TRST is not included due to internal pulldown. (2) Measured with average CPU activity: 50% of time: 8 instructions per cycle, 32-bit DMEM access per cycle 50% of time: 2 instructions per cycle, 16-bit DMEM access per cycle (3) Measured with average peripheral activity: 50% of time: Timers at max rate, McBSPs at E1 rate, and DMA burst transfer between DMEM and SDRAM 50% of time: Timers at max rate, McBSPs at E1 rate, and DMA servicing McBSPs (4) Measured with average I/O activity (30-pF load, SDCLK on): 25% of time: Reads from external SDRAM 25% of time: Writes to external SDRAM 50% of time: No activity (5) This parameter is not tested. 28 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: SMJ320C6701-SP |
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