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CSD23202W10T Fiches technique(PDF) 6 Page - Texas Instruments |
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CSD23202W10T Fiches technique(HTML) 6 Page - Texas Instruments |
6 / 12 page 0.1 1 10 100 0.1 1 10 100 − V DS - Drain-to-Source Voltage (V) 100us 1ms 10ms 100ms G001 0.0 0.5 1.0 1.5 2.0 2.5 −50 −25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 −75 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) VGS = −1.5 V VGS = −1.8 V VGS = −2.5 V VGS = −4.5 V G001 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 − V SD − Source-to-Drain Voltage (V) TC = 25°C TC = 125°C G001 CSD23202W10 SLPS506 – AUGUST 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) ID = –0.5 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Single Pulse, Max RθJA = 195°C/W Figure 10. Maximum Safe Operating Area Figure 11. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD23202W10 |
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