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CSD17575Q3T Fiches technique(PDF) 1 Page - Texas Instruments |
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CSD17575Q3T Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 13 page 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 25A TC = 125°C,I D = 25A G001 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 Qg - Gate Charge (nC) G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0095-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17575Q3 SLPS489A – JUNE 2014 – REVISED AUGUST 2014 CSD17575Q3 30-V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low RDS(on) VDS Drain-to-Source Voltage 30 V • Low Thermal Resistance Qg Gate Charge Total (4.5V) 23 nC Qgd Gate Charge Gate-to-Drain 5.4 nC • Avalanche Rated VGS = 4.5 V 2.6 • Pb Free Terminal Plating Drain-to-Source On- RDS(on) m Ω Resistance VGS = 10 V 1.9 • RoHS Compliant Vth Threshold Voltage 1.4 V • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package . Ordering Information(1) 2 Applications Device Media Qty Package Ship CSD17575Q3 13-Inch Reel 2500 • Point of Load Synchronous Buck Converter for SON 3.3 × 3.3 mm Tape and Plastic Package Reel CSD17575Q3T 13-Inch Reel 250 Applications in Networking, Telecom, and Computing Systems (1) For all available packages, see the orderable addendum at the end of the data sheet. • Optimized for Synchronous FET Applications Absolute Maximum Ratings 3 Description TA = 25°C VALUE UNIT This 1.9 m Ω, 30 V, SON 3×3 NexFET™ power VDS Drain-to-Source Voltage 30 V MOSFET is designed to minimize losses in power VGS Gate-to-Source Voltage ±20 V conversion applications. Continuous Drain Current (Package Limit) 60 Top View Continuous Drain Current (Silicon Limit), ID 182 A TC = 25°C Continuous Drain Current(1) 27 IDM Pulsed Drain Current(2) 240 A Power Dissipation(1) 2.8 PD W Power Dissipation, TC = 25°C 108 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 115 mJ ID = 48, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 45°C/W on 1-inch 2 Cu (2 oz.) on 0.060-inch thick FR4 PCB. (2) Max RθJC = 1.5°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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