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CDCM6208V2G Fiches technique(PDF) 6 Page - Texas Instruments |
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CDCM6208V2G Fiches technique(HTML) 6 Page - Texas Instruments |
6 / 88 page 6 CDCM6208V2G SNAS682 – MARCH 2016 www.ti.com Product Folder Links: CDCM6208V2G Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute—maximum—rated conditions for extended periods may affect device reliability. 8 Specifications 8.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) PARAMETER MIN MAX UNIT Supply Voltage Range, VDD_PRI, VDD_SEC, VDD_Yx_Yy, VDD_PLL[2:1], DVDD -0.5 4.6 V Input Voltage Range CMOS control inputs, VIN -0.5 4.6 and V DVDD+ 0.5 V Input Voltage Range PRI/SEC inputs 4.6 and VVDDPRI.SEC+ 0.5 V Output Voltage Range, VOUT -0.5 VYxYy+ 0.5 V Input Current, IIN 20 mA Output Current, IOUT 50 mA Junction Temperature, TJ 125 °C Storage temperature range, Tstg -65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 8.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500 |
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