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MJE8502 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJE8502 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor MJE8502 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) · High Switching Speed APPLICATIONS · Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: · Switching regulators · Inverters · Solenoid and relay drivers · Motor controls · Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃ /W SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1200 V VCEO(SUS) Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation@TC=25℃ 80 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature -65~125 ℃ |
Numéro de pièce similaire - MJE8502 |
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Description similaire - MJE8502 |
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