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2SD2018 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SD2018
Description  Silicon NPN epitaxial planar type darlington
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2018 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Power Transistors
1
Publication date: May 2003
SJD00239BED
2SD2018
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
• High forward current transfer ratio h
FE
• Built-in 60 V Zener diode between base to collector
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 100
µA, I
E = 0
50
85
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
50
85
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 01
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 4 V, I
C
= 02
mA
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 1.0 A
6 500
40 000
Collector-emitter saturation voltage *
VCE(sat)
IC = 1.0 A, IB = 1.0 mA
1.8
V
Base-emitter saturation voltage *
VBE(sat)
IC
= 1.0 A, I
B
= 1.0 mA
2.2
V
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power
TC
= 25°CP
C
1.2
W
dissipation
5.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
8.0
+0.5
–0.1
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
Note) *: With a 100 mm
× 100 mm × 2 mm Al heat sick.
B
E
R1
R2
C
+25
−10
+25
−10


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