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2SC5845 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SC5845
Description  Silicon NPN epitaxial planar type
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC5845 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Transistors
1
Publication date: August 2003
SJC00297AED
2SC5845
Silicon NPN epitaxial planar type
For general amplification
■ Features
• High forward current transfer ratio h
FE
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µΑ, IE = 060
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 µΑ, I
C
= 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
µA
Forward current transfer ratio
hFE
VCE
= 10 V, I
C
= 2 mA
160
460
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.2
pF
(Common base, input open circuited)
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
100
MHz
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Marking Symbol: 7M
0.40
+0.10
–0.05
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.


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