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TPS3836K33QDBVRQ1 Fiches technique(PDF) 6 Page - Texas Instruments |
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TPS3836K33QDBVRQ1 Fiches technique(HTML) 6 Page - Texas Instruments |
6 / 18 page TPS3836E18-Q1 / J25-Q1 / H30-Q1 / L30-Q1 / K33-Q1 TPS3837E18-Q1 / J25-Q1 / L30-Q1 / K33-Q1, TPS3838E18-Q1 / J25-Q1 / L30-Q1 / K33-Q1 NANOPOWER SUPERVISORY CIRCUITS SGLS141A − DECEMBER 2002 − REVISED JANUARY 2007 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITION MIN TYP MAX UNIT RESET VDD = 3.3 V, IOH = −2 mA V High level output voltage RESET (TPS3836) VDD = 6 V, IOH = −3 mA 0.8 × V VOH High-level output voltage RESET VDD = 1.8 V, IOH = −1 mA 0.8 × VDD V RESET (TPS3837) VDD = 3.3 V, IOL = −2 mA RESET VDD = 1.8 V, IOL = 1 mA V Low level output voltage RESET (TPS3836/8) VDD = 3.3 V, IOL = 2 mA 04 V VOL Low-level output voltage RESET VDD = 3.3 V, IOL = 2 mA 0.4 V RESET (TPS3837) VDD = 6 V, IOL = 3 mA Power up reset voltage TPS3836/8 VDD ≥ 1.1 V, IOL = 50 µA 0.2 Power-up reset voltage (see Note 2) TPS3837 VDD ≥ 1.1 V, IOH = −50 µA 0.8 × VDD V TPS383xE18 1.64 1.71 1.76 Nti i it th h ld TPS383xJ25 2.16 2.25 2.30 VIT Negative-going input threshold voltage (see Note 3) TPS383xH30 2.70 2.79 2.85 V VIT voltage (see Note 3) TPS383xL30 2.54 2.64 2.71 V TPS383xK33 2.82 2.93 3.10 1.7 V < VIT < 2.5 V 30 Vhys Hysteresis at VDD input 2.5 V < VIT < 3.5 V 40 mV Vhys Hysteresis at VDD input 3.5 V < VIT < 5 V 50 mV IIH High-level input current MR (see Note 4) MR = 0.7 × VDD, VDD = 6 V −40 −60 −100 µA IIH High level input current CT CT = VDD = 6 V −25 25 nA IIL Low-level input current MR (see Note 4) MR = 0 V, VDD = 6 V −130 −200 −340 µA IIL Low level input current CT CT = 0 V, VDD = 6 V −25 25 nA IOH High-level output current TPS3838 VDD = VIT + 0.2 V, VOH = VDD 25 nA VDD > VIT, VDD < 3 V 220 500 nA IDD Supply current VDD > VIT, VDD > 3 V 250 550 nA IDD Supply current VDD < VIT 10 25 µA Internal pullup resistor at MR 30 k Ω CI Input capacitance at MR, CT VI = 0 V to VDD 5 pF NOTES: 2. The lowest voltage at which RESET output becomes active. tr, VDD ≥ 15 µs/V 3. To ensure best stability of the threshold voltage, a bypass capacitor (ceramic, 0.1 µF) should be placed near the supply terminal. 4. If manual reset is unused, MR should be connected to VDD to minimize current consumption. |
Numéro de pièce similaire - TPS3836K33QDBVRQ1 |
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Description similaire - TPS3836K33QDBVRQ1 |
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