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BAV100 Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce BAV100
Description  Superfast Recovery SMD Rectifier Diodes
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BAV100 Fiches technique(HTML) 1 Page - Diotec Semiconductor

  BAV100_15 Datasheet HTML 1Page - Diotec Semiconductor BAV100_15 Datasheet HTML 2Page - Diotec Semiconductor  
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BAV100 ... BAV103
BAV100 ... BAV103
Superfast Recovery SMD Rectifier Diodes
SMD-Gleichrichterdioden mit superschnellem Sperrverzug
IFAV = 200 mA
VF
< 1.25 V
Tjmax = 175°C
VRRM = 50...300 V
IFSM = 1 A
trr
< 50 ns
Version 2015-10-21
~ DO-213AA
Plastic MiniMELF
Dimensions - Maße [mm]
Typical Applications
Rectification of higher frequencies,
High speed switching
Commercial grade 1)
Typische Anwendungen
Gleichrichtung hoher Frequenzen
Schnelles Schalten
Standardausführung 1)
Features
Package compatible to SOD-87
High power dissipation
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Gehäuse kompatibel zu SOD-87
Hohe Leistungsabgabe
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1
)
Taped and reeled
2500 / 7“
Gegurtet auf Rolle
Weight approx.
0.04 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Marking:
One green ring denotes “cathode” and “superfast switching diode”
The type numbers are noted only on the lable on the reel
Kennzeichnung:
Ein grüner Ring kennzeichnet “Kathode” und “superschnelle Diode”
Die Typenbezeichnungen sind nur auf dem Rollenaufkleber vermerkt
Maximum ratings2)
Grenzwerte 2)
Type
Typ
Reverse voltage
Sperrspannung
VR [V]
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
BAV100
50
60
BAV101
100
110
BAV102
150
200
BAV103
200
300
Max. power dissipation
Max. Verlustleistung
TA = 75°C
Ptot
500 mW 3)
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
IFAV
200 mA 3)
Repetitive peak forward current – Periodischer Spitzenstrom
f > 15 Hz
IFRM
650 mA 3)
Peak forward surge current, t ≤ 1 s
Stoßstrom, t ≤ 1 s
TA = 25°C
IFSM
1 A
Peak forward surge current, t ≤ 1 µs
Stoßstrom, t ≤ 1 µs
TA = 25°C
IFSM
5 A
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS


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