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BUZ11 Datasheet(Fiches technique) 1 Page - Inchange Semiconductor Company Limited

Numéro de pièce BUZ11
Description  High input impedance
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ11 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUZ11 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUZ11 Datenblatt HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
BUZ11
DESCRIPTION
·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max)
·SOA is Power Dissipation Limited
·High input impedance
APPLICATIONS
designed for applications such as switching regulators,
switching converters, motor drivers,relay drivers and
drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
50
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
30
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
75
℃/W
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