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ES1B Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce ES1B
Description  Superfast Efficient SMD Rectifier Diodes
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

ES1B Fiches technique(HTML) 1 Page - Diotec Semiconductor

  ES1B Datasheet HTML 1Page - Diotec Semiconductor ES1B Datasheet HTML 2Page - Diotec Semiconductor  
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ES1A ... ES1J
ES1A ... ES1J
Superfast Efficient SMD Rectifier Diodes
Superschnelle SMD-Gleichrichter für hohen Wirkungsgrad
IFAV = 1 A
VF1 < 0.92 V
Tjmax = 150°C
VRRM = 50...600 V
IFSM = 30/33 A
trr
< 15...35 ns
Version 2015-10-22
~ SMA / ~ DO-214AC
Dimensions - Maße [mm]
Typical Applications
Rectification of higher frequencies
High efficient switching stages
Commercial grade 1)
Typische Anwendungen
Gleichrichtung hoher Frequenzen
Wandlerstufen mit hohem Wirkungsgrad
Standardausführung 1)
Features
Extremely low reverse recovery time
Low forward voltage drop
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Extrem niedrige Sperrverzugszeit
Niedrige Fluss-Spannung
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
7500 / 13“
Gegurtet auf Rolle
Weight approx.
0.07 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings and Characteristics 2)
Grenz- und Kennwerte 2)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
ES1A
50
50
ES1B
100
100
ES1C
150
150
ES1D
200
200
ES1F
300
300
ES1G
400
400
ES1J
600
600
Max. average forward rectified current – Dauergrenzstrom in Einwegschaltung
TT = 100°C
IFAV
1 A
Repetitive peak forward current – Periodischer Spitzenstrom
f > 15 Hz
IFRM
6 A 3)
Peak forward surge current (half sine) – Stoßstrom (Sinushalbw.) 50/60 Hz
TA = 25°C
IFSM
30/33 A
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
4.5 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 70 K/W 4)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
RthT
< 30 K/W
Typ. junction capacitance – Typ. Sperrschichtkapazitat
VR = 4 V
Cj
10 pF
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C
4
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
Type
Typ
0.15
1
± 0.3
4.5± 0.3
5
± 0.2
Pb
RoHS


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