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SMP1321-003LF Fiches technique(PDF) 3 Page - Skyworks Solutions Inc. |
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SMP1321-003LF Fiches technique(HTML) 3 Page - Skyworks Solutions Inc. |
3 / 8 page DATA SHEET • SMP1321 SERIES: LOW CAPACITANCE, PLASTIC PACKAGED PIN DIODES Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com 200048U • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • August 6, 2015 3 Table 2. SMP1321 Series Absolute Maximum Ratings (Per Junction) (Note 1) Parameter Symbol Minimum Maximum Units Reverse voltage VR 100 V Power dissipation @ 25 °C lead temperature PD 250 mW Storage temperature TSTG –65 +150 C Operating temperature TA –65 +150 C Electrostatic discharge: Human Body Model (HBM), Class 1A ESD 500 V Note 1: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. CAUTION: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times. Table 3. SMP1321 Series Electrical Specifications (Per Junction) (Note 1) (TA = +25 C, Unless Otherwise Noted) Parameter Symbol Test Condition Min Typical Max Units Reverse current IR VR = 100 V 10 μA Capacitance (Note 2) CT F = 1 MHz, V = 30 V 0.18 0.25 pF Resistance RS F = 100 MHz I = 1 mA I = 10 mA 3.00 1.05 2.00 Ω Ω Forward voltage VF IF = 10 mA 0.85 V Carrier lifetime TI IF = 10 mA 0.4 μs I region width 15 μm Note 1: Performance is guaranteed only under the conditions listed in this table. Note 2: CT is 0.4 pF maximum for the SMP1321-007. Table 4. Resistance vs Temperature @ 500 MHz (Per Junction) IF (mA) RS @ –55 °C ( Ω) RS @ –15 °C ( Ω) RS @ +25 °C ( Ω) RS @ +65 °C ( Ω) RS @ +100 °C ( Ω) 0.02 47.4 50.0 56.3 61.5 65.1 0.10 12.0 12.6 13.9 15.4 16.4 0.3 5.2 5.4 5.8 6.4 6.9 0.5 3.6 3.8 4.1 4.5 4.8 1.0 2.4 2.5 2.6 2.8 3.1 10 1.03 1.04 1.04 1.07 1.15 20 0.871 0.888 0.873 0.889 0.956 100 0.669 0.659 0.642 0.645 0.695 |
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