BU1006A-E3, BU1008A-E3, BU1010A-E3

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Vishay General Semiconductor

Revision: 16-Aug-13

3

Document Number: 84800

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

1000

20

10

60

40

30

50

70

90

100

80

0.01

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

0.1

1

10

100

10

100

Reverse Voltage (V)

+

-

~~

Case Type BU

0.880 (22.3)

0.860 (21.8)

0.160 (4.1)

0.140 (3.5)

0.075

(1.9) R

0.125 (3.2) x 45°

Chamfer

0.080 (2.03)

0.060 (1.52)

0.050 (1.27)

0.040 (1.02)

0.190 (4.83)

0.210 (5.33)

0.080 (2.03)

0.065 (1.65)

0.100 (2.54)

0.085 (2.16)

0.085 (2.16)

0.065 (1.65)

0.310 (7.9)

0.290 (7.4)

0.020R (TYP.)

Polarity shown on front side of case, positive lead beveled corner

0.64 (16.28) REF.

0.62 (15.78) REF.

0.055 (1.385) REF.

R 0.10

(2.60) REF.

R 0.11

(2.78) REF.

0.094 (2.39) x 45° REF.

0.055 (1.385) REF.

0.161 (4.10)

0.142 (3.60)

0.710 (18.0)

0.690 (17.5)

0.028 (0.72)

0.020 (0.52)

0.740 (18.8)

0.720 (18.3)

View A

0.048 (1.23)

0.039 (1.00)

5°

TYP.

9°

TYP.