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FJP13007 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FJP13007
Description  High Voltage Switch Mode Application
Download  6 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FJP13007 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FJP13007 Rev. A
2
Electrical Characteristics T
C = 25°C unless otherwise noted
* Pulse Test: PW
≤ 300μs, Duty Cycle ≤ 2%
hFE Classification
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
400
V
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
1
mA
hFE1
hFE2
DC Current Gain *
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
8
5
60
30
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
1.0
2.0
3.0
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
1.2
1.6
V
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
4
MHz
Cob
Output Capacitance
VCB = 10V, f = 0.1MHz
110
pF
tON
Turn On Time
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 25Ω
1.6
μs
tSTG
Storge Time
3.0
μs
tF
Fall Time
0.7
μs
Classification
H1
H2
hFE1
15 ~ 28
26 ~ 39


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