BAW56T datasheet(1/4 Pages) JIANGSU

No de pièce	BAW56T

Description	SWITCHING DIODE

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

www.cj-elec.com

1

B,Oct,2014

SOT-523 Plastic-Encapsulate Diode

BAW56T

BAV70

T

MARKING:JD

MARKING:JE

Solid dot = Green molding compound device,

the normal device

if none,

BAV99T

Maximum Ratings @Ta=25

℃

Reverse Voltage

VR

85

V

Forward Current

IF

75

mA

IFSM

2.0

A

Power Dissipation

PD

150

mW

Thermal Resistance Junction to Ambient

RθJA

833

℃/W

Junction Temperature

TJ

150

℃

Storage Temperature range

TSTG

-55

~+150

℃

Forward Surge Current @t=8.3ms

Non-Repetitive Peak

Parameter

Symbol

Limit

Unit

MARKING:JJ

BAW56T/BAV70T/BAV99T SWITCHING DIODE

FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

SOT-523

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

V(BR)

IR= 1μA

85

V

IR1

VR=75V

2

μA

Reverse voltage leakage current

IR2

VR=25V

0.03

μA

Forward voltage

VF

IF=1mA

IF=10mA

IF=50mA

IF=150mA

715

855

1000

1250

mV

Diode capacitance

CD

VR=0

f=1MHz

1.5

pF

Reverse recovery time

t r r

IF=IR=10mA

Irr=0.1×IR,RL=100Ω

4

n

s

JD

J J

J E

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