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IRLML2502 Fiches technique(PDF) 1 Page - International Rectifier |
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IRLML2502 Fiches technique(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W IRLML2502 HEXFET® Power MOSFET These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3 , is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Thermal Resistance VDSS = 20V RDS(on) = 0.045Ω l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching Description 04/30/03 www.irf.com 1 Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.4 A IDM Pulsed Drain Current 33 PD @TA = 25°C Power Dissipation 1.25 PD @TA = 70°C Power Dissipation 0.8 Linear Derating Factor 0.01 W/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings W Micro3 D S G 3 1 2 PD - 93757C |
Numéro de pièce similaire - IRLML2502 |
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Description similaire - IRLML2502 |
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