Application Note AN-957

Table of Contents

Page

1. General Information........................................................................................1

2. BVDSS................................................................................................................3

3. IDSS....................................................................................................................3

4. VGS(th) ................................................................................................................3

5. IGSS...................................................................................................................4

6. gfs ....................................................................................................................4

7. RDS(on) ..............................................................................................................5

8. VSD ..................................................................................................................5

9. Composite Characteristics.............................................................................6

10. Transfer Characteristics...............................................................................6

11. Transfer Characteristics...............................................................................7

12. A Fixture to Speed-Up Testing Time ......................................................... 10

This application note describes methods for measuring HEXFET Power MOSFET

characteristics, both with a curve tracer and with special-purpose test circuits.