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BTA06-800C Fiches technique(PDF) 4 Page - STMicroelectronics |
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BTA06-800C Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 6 page BTA/BTB06 Series 4/6 Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus case temperature (full cycle). Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: On-state characteristics (maximum values). Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 0123456 0 1 2 3 4 5 6 7 8 P (W) IT(RMS)(A) 0 25 50 75 100 125 0 1 2 3 4 5 6 7 IT(RMS) (A) BTA BTB Tc(°C) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-2 1E-1 1E+0 K=[Zth/Rth] Zth(j-c) Zth(j-a) tp(s) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 ITM (A) Tj=Tj max Tj max. Vto = 0.85 V Rd = 60 m Ω VTM(V) 1 10 100 1000 0 10 20 30 40 50 60 70 ITSM (A) Non repetitive Tj initial=25°C Repetitive Tc=105°C One cycle t=20ms Number of cycles 0.01 0.10 1.00 10.00 10 100 1000 tp (ms) ITSM (A), I²t (A²s) Tj initial=25°C ITSM I²t dI/dt limitation: 50A/µs |
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Description similaire - BTA06-800C |
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