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MTB080P06Q8 Fiches technique(PDF) 2 Page - Cystech Electonics Corp.

No de pièce MTB080P06Q8
Description  P-Channel Enhancement Mode Power MOSFET
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Fabricant  CYSTEKEC [Cystech Electonics Corp.]
Site Internet  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB080P06Q8 Fiches technique(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C069Q8
Issued Date : 2016.01.29
Revised Date :
Page No. : 2/9
MTB080P06Q8
CYStek Product Specification
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TA=25
°C, VGS=-10V
-4
Continuous Drain Current @ TA=70
°C, VGS=-10V
ID
-3.2
Pulsed Drain Current
IDM
-18 *1
Avalanche Current
IAS
-4
A
Avalanche Energy @ L=6mH, ID=-4A, VDD=-15V
EAS
48
Repetitive Avalanche Energy @ L=0.05mH
EAR
2.5 *2
mJ
TA=25℃
3.1 *3
Total Power Dissipation
TA=70℃
PD
2
*3
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
25
Thermal Resistance, Junction-to-ambient, max
RθJA
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125
°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-60
-
-
VGS=0V, ID=-250μA
VGS(th)
-1.0
-
-2.5
V
VDS=VGS, ID=-250μA
IGSS
-
-
±100
nA
VGS=±20V, VDS=0V
-
-
-1
VDS=-60V, VGS=0V
IDSS
-
-
-10
μA
VDS=-48V, VGS=0V, Tj=85
°C
-
80.3
105
VGS=-10V, ID=-4A
RDS(ON) *1
-
108
145
m
Ω
VGS=-4.5V, ID=-3A
GFS
*1
-
10
-
S
VDS=-10V, ID=-10A
Dynamic
Ciss
-
503
-
Coss
-
54
-
Crss
-
37
-
pF
VDS=-25V, VGS=0V, f=1MHz


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