BU4522AX datasheet(2/7 Pages) PHILIPS

No de pièce	BU4522AX

Description	Silicon Diffused Power Transistor

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4522AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

BE = 0 V; VCE = VCESMmax

-

1.0

mA

I

CES

V

BE = 0 V; VCE = VCESMmax;

-

2.0

mA

T

j = 125 ˚C

I

EBO

Emitter cut-off current

V

EB = 7.5 V; IC = 0 A

-

1.0

mA

BV

EBO

Emitter-base breakdown voltage

I

B = 1 mA

7.5

13.5

-

V

CEOsust

Collector-emitter sustaining voltage

I

B = 0 A; IC = 100 mA;

800

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

C = 7 A; IB = 1.75 A

-

3.0

V

BEsat

Base-emitter saturation voltage

I

C = 7 A; IB = 1.75 A

0.85

0.94

1.03

V

h

FE

DC current gain

I

C = 1 A; VCE = 5 V

-

10

-

h

FE

I

C = 7 A; VCE = 5 V

4.2

5.8

7.3

DYNAMIC CHARACTERISTICS

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (16 kHz line

f = 16 kHz; I

Csat = 7 A; IB1 = 1.4 A;

deflection circuit)

(I

B2 = -3.5 A)

t

s

Turn-off storage time

3.5

4.3

µs

t

f

Turn-off fall time

285

400

ns

Switching times (64 kHz line

f = 64 kHz; I

Csat = 6 A; IB1 = 1.2

A;

deflection circuit)

(I

B2 = -3.6 A)

t

s

Turn-off storage time

2.3

2.7

µs

t

f

Turn-off fall time

170

230

ns

2 Measured with half sine-wave voltage (curve tracer).

December 1997

2

Rev 1.000

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