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BAV70WS Fiches technique(PDF) 1 Page - Nanjing International Group Co |
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BAV70WS Fiches technique(HTML) 1 Page - Nanjing International Group Co |
1 / 3 page BAV70WS Silicon Epitaxial Planar Switching Diode Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 70 V Average Rectified Forward Current IF(AV) 200 mA Non-Repetitive Peak Forward Current t = 1 µs t = 1 s IFSM 2 1 A Power Dissipation Pd 250 mW Operating Junction Temperature Range Tj 150 O C Storage Temperature Range Tstg - 55 to + 150 O C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Reverse Voltage at IR = 100 μA VR 70 - V Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA VF - - - 715 855 1 mV mV V Reverse Voltage at VR = 70 V at VR = 25 V, Ta = 150 OC at VR = 70 V, Ta = 150 OC IR - - - 5 60 100 μA Reverse Recovery Time at IF = IR = 10 mA to IR = 1 mA, RL = 100 Ω trr - 6 ns Total Capacitance at VR = 0, f = 1 MHz CT - 1.5 pF Anode 2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol 1 2 PINNING 1 PIN Cathode DESCRIPTION W2 |
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