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BCW69 Fiches technique(PDF) 2 Page - Diotec Semiconductor

No de pièce BCW69
Description  Surface mount Si-Epitaxial PlanarTransistors
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BCW69 Fiches technique(HTML) 2 Page - Diotec Semiconductor

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1) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
47
01.11.2003
General Purpose Transistors
BCW 69, BCW 70
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
- I
C = 10 mA, - IB = 0.5 mA
- V
BEsat
720 mV
- I
C = 50 mA, - IB = 2.5 mA
- V
BEsat
810 mV
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- V
CE = 5 V, - IC = 10
:A
BCW 69
h
FE
–90–
BCW 70
h
FE
150
- V
CE = 5 V, - IC = 2 mA
BCW 69
h
FE
120
260
BCW 70
h
FE
215
500
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- V
CE = 5 V, - IC = 2 mA
- V
BEon
600 mV
750 mV
Gain-Bandwidth Product – Transitfrequenz
- V
CE = 5 V, - IC = 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
4.5 pF
Noise figure – Rauschzahl
- V
CE = 5 V, - IC = 200
:A, R
G = 2 k
S,
f = 1 kHz,
)f = 200 Hz
F
10 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
420 K/W 2)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BCW 71, BCW 72
Marking – Stempelung
BCW 69 = H1
BCW 70 = H2


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