BCW33 datasheet(2/2 Pages) DIOTEC

No de pièce	BCW33

Description	Surface mount Si-Epitaxial PlanarTransistors

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Fabricant	DIOTEC [Diotec Semiconductor]

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1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

37

01.11.2003

General Purpose Transistors

BCW 31, BCW 32, BCW 33

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

I

C = 10 mA, IB = 0.5 mA

V

BEsat

–

750 mV

–

I

C = 50 mA, IB = 2.5 mA

V

BEsat

–

850 mV

–

DC current gain – Kollektor-Basis-Stromverhältnis 1)

V

CE = 5 V, IC = 10

:A

BCW 31

h

FE

–

190

–

BCW 32

h

FE

–

330

–

BCW 33

h

FE

–

600

–

V

CE = 5 V, IC = 2 mA

BCW 31

h

FE

110

–

220

BCW 32

h

FE

200

–

450

BCW 33

h

FE

420

–

800

Base-Emitter voltage – Basis-Emitter-Spannung 1)

V

CE = 5 V, IC = 2 mA

V

BEon

550 mV

–

700 mV

Gain-Bandwidth Product – Transitfrequenz

V

CE = 5 V, IC = 10 mA, f = 100 MHz

f

T

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

V

CB = 10 V, IE = ie = 0, f = 1 MHz

C

CB0

–

2.5 pF

–

Noise figure – Rauschzahl

V

CE = 5 V, IC = 200

:A, R

G = 2 k

S,

f = 1 kHz,

)f = 200 Hz

F

–

10 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

R

thA

420 K/W 2)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW 29, BCW 30

Marking – Stempelung

BCW 31 = D1

BCW 32 = D2

BCW 33 = D3

Numéro de pièce similaire - BCW33

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BCW33	42Kb / 8P	NPN general purpose transistors 1999 Apr 13
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