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BCP51 Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce BCP51
Description  Surface mount Si-Epitaxial PlanarTransistors
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BCP51 Fiches technique(HTML) 1 Page - Diotec Semiconductor

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
24
01.11.2003
4
3
2
1
3
±0.1
6.5
±0.2
0.7
3.25
2.3
1.65
BCP 51, BCP 52, BCP 53
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
1.3 W
Plastic case
SOT-223
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2, 4 = C
3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BCP 51
BCP 52
BCP 53
Collector-Emitter-voltage
B open
- V
CE0
45 V
60 V
80 V
Collector-Base-voltage
E open
- V
CB0
45 V
60 V
100 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation – Verlustleistung
P
tot
1.3 W 1)
Collector current – Kollektorstrom (DC)
- I
C
1 A
Peak Collector current – Koll.-Spitzenstrom
- I
CM
1.5 A
Peak Base current – Basis-Spitzenstrom
- I
BM
200 mA
Junction temperature – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 65…+ 150
/C
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
I
E = 0, - VCB = 30 V
- I
CB0
100 nA
I
E = 0, - VCB = 30 V, Tj = 125
/C- I
CB0
10
:A
Emitter-Base cutoff current – Emitterreststrom
I
C = 0, - VEB = 5 V
- I
EB0
100 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- I
C = 500 mA, - IB = 50 mA
- V
CEsat
500 mV


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