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1SS405 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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1SS405 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS405 2014-03-01 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 High Speed Switching Application Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5μA (max) Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 mA Average forward current IO 50 mA Surge current (10ms) IFSM 1 A Power dissipation P * 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1mA ― 0.33 ― VF (2) ― IF = 5mA ― 0.38 ― Forward voltage VF (3) ― IF = 50mA ― 0.50 0.55 V Reverse current IR ― VR = 20V ― ― 0.5 μA Total capacitance CT ― VR = 0, f = 1MHz ― 3.9 ― pF Equivalent Circuit (Top View) Marking JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 1.4mg(Typ.) Unit: mm A7 Start of commercial production 2001-09 |
Numéro de pièce similaire - 1SS405_14 |
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Description similaire - 1SS405_14 |
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