BAS16T datasheet(4/4 Pages) YEASHIN

No de pièce	BAS16T

Description	Silicon Switching Diode

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Fabricant	YEASHIN [Yea Shin Technology Co., Ltd]

Site Internet	http://www.yeashin.com

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REV.02 20130922

BAS16T

PACKAGE OUTLINE & DIMENSIONS

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETERS

3.MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4.463C-01 OBSOLETE, NEW STANDARD 463C-02.

SOT-523/SC-89

Numéro de pièce similaire - BAS16T

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BAS16T	72Kb / 12P	High-speed diode 1998 Jan 20
NXP Semiconductors	BAS16T	150Kb / 20P	High-speed switching diodes Rev. 05-25 August 2008
Goodwork Semiconductor ...	BAS16T	808Kb / 3P	Plastic-Encapsulate Diodes
Diodes Incorporated	BAS16T	200Kb / 3P	SURFACE MOUNT FAST SWITCHING DIODE DS30260 Rev. 3 - 2
NXP Semiconductors	BAS16T	150Kb / 20P	High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages Rev. 05-25 August 2008

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	BAW101	429Kb / 3P	Silicon Switching Diode Sep-24-2003
Infineon Technologies A...	BAS21	453Kb / 5P	Silicon Switching Diode Jan-30-2003
ON Semiconductor	BAS16TT1	123Kb / 8P	Silicon Switching Diode March, 2000 ??Rev. 0
Central Semiconductor C...	1N4454	67Kb / 1P	Silicon switching diode
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ON Semiconductor	BAS16TT1	63Kb / 6P	Silicon Switching Diode May, 2004 ??Rev. 2
Leshan Radio Company	LBAS16WT1	166Kb / 4P	Silicon Switching Diode
Guangdong Kexin Industr...	1SS222	36Kb / 1P	SILICON SWITCHING DIODE
ON Semiconductor	BAS16TT1G	128Kb / 5P	Silicon Switching Diode October, 2010 -- Rev. 3
Infineon Technologies A...	BAS21	119Kb / 9P	Silicon Switching Diode 2007-04-19
Infineon Technologies A...	BAW56	153Kb / 12P	Silicon Switching Diode 2007-09-19