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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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CSD13201W10 Fiches technique(PDF) 3 Page - Texas Instruments |
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CSD13201W10 Fiches technique(HTML) 3 Page - Texas Instruments |
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3 / 15 page  CSD13201W10 www.ti.com SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 12 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 0.65 0.8 1.1 V VGS = 1.8 V, ID = 1 A 38 53 RDS(on) Drain-to-source on resistance VGS = 2.5 V, ID = 1 A 29 39 m Ω VGS = 4.5 V, ID = 1 A 26 34 gfs Transconductance VDS = 6 V, ID = 1 A 23 S DYNAMIC CHARACTERISTICS CISS Input capacitance 385 462 pF COSS Output capacitance VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 245 294 pF CRSS Reverse transfer capacitance 18.1 22.6 pF Rg Series gate resistance 3 Ω Qg Gate charge total (4.5 V) 2.3 2.9 nC Qgd Gate charge gate-to-drain 0.3 nC VDS = 6 V, ID = 1 A Qgs Gate charge gate-to-source 0.5 nC Qg(th) Gate charge at Vth 0.3 nC QOSS Output charge VDS = 6.0 V, VGS = 0 V 1.8 nC td(on) Turn on delay time 3.9 ns tr Rise time 5.9 ns VDS = 6 V, VGS = 4.5 V, ID = 1 A RG = 20 Ω td(off) Turn off delay time 14.4 ns tf Fall time 9.7 ns DIODE CHARACTERISTICS VSD Diode forward voltage IS = 1 A, VGS = 0 V 0.7 1 V Qrr Reverse recovery charge 2.4 nC VDS= 6 V, IS = 1 A, di/dt = 100 A/μs trr Reverse recovery time 11.5 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJA Thermal resistance junction-to-ambient (minimum Cu area) 228.6 °C/W RθJA Thermal resistance junction-to-ambient (1 in2 Cu area) 131.1 °C/W Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD13201W10 |
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