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TPS563208DDCR Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce TPS563208DDCR
Description  Synchronous Step-Down Voltage Regulator
Download  25 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

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GND
1
VBST
6
SW
2
EN
5
VIN
3
VFB
4
TPS563201, TPS563208
www.ti.com
SLVSD90 – DECEMBER 2015
5 Pin Configuration and Functions
DDC Package
6-Pin SOT
Top View
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
Ground pin Source terminal of low-side power NFET as well as the ground terminal for
GND
1
controller circuit. Connect sensitive VFB to this GND at a single point.
SW
2
O
Switch node connection between high-side NFET and low-side NFET.
VIN
3
I
Input voltage supply pin. The drain terminal of high-side power NFET.
VFB
4
I
Converter feedback input. Connect to output voltage with feedback resistor divider.
EN
5
I
Enable input control. Active high and must be pulled up to enable the device.
Supply input for the high-side NFET gate drive circuit. Connect 0.1 µF capacitor between
VBST
6
O
VBST and SW pins.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VIN, EN
–0.3
19
V
VBST
–0.3
25
V
VBST (10 ns transient)
–0.3
27
V
Input voltage
VBST (vs SW)
–0.3
6.5
V
VFB
–0.3
6.5
V
SW
–2
19
V
SW (10 ns transient)
–3.5
21
V
Operating junction temperature, TJ
–40
150
°C
Storage temperature, Tstg
–55
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±3000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
±1500
C101(2)
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Copyright © 2015, Texas Instruments Incorporated
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Product Folder Links: TPS563201 TPS563208


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