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TCR2DG28 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TCR2DG28 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 15 page TCR2DG series 2014-03-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 200 mA Power dissipation PD 800 (Note1) mW Operation temperature range Topr −40 to 85 °C Junction temperature Tj 150 °C Storage temperature range Tstg −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.8mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 |
Numéro de pièce similaire - TCR2DG28 |
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Description similaire - TCR2DG28 |
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