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2SC3356S-G Fiches technique(PDF) 1 Page - Comchip Technology |
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2SC3356S-G Fiches technique(HTML) 1 Page - Comchip Technology |
1 / 4 page 2SC3356-G Series RoHS Device Page 1 REV: A Features - Low noise and high gain. - High power gain. 1 Base 2 Emitter Collector 3 QW-BTR48 Part No. Range 50-100 80-160 2SC3356R-G Marking R23 R24 Company reserves the right to improve product design , functions and reliability without notice. 1 : BASE 2 : EMITTER 3 : COLLECTOR Maximum Ratings (at TA=25°C unless otherwise noted) VCEO Emitter-Base voltage Collector-Emitter voltage Collector-Base voltage Collector current - continuous Symbol Parameter Value Unit V V V 3 12 20 IC 100 mA 200 mW PC Collector dissipation VCBO VEBO °C TJ Junction temperature 150 °C Storage temperature -65~+150 Symbol Parameter Conditions Min Max Unit Electrical Characteristics (at TA=25°C unless otherwise noted) Collector-Base breakdown voltage 1 IC =10μA , IE=0 Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Insertion power gain Transition frequency Noise Figure IC =1mA , IB=0 IE =10μA , IC=0 VCB=10V , IE=0 VEB=1V , IC=0 VCE=10V , IC=20mA VCE=10V , IC=20mA , f=1GHZ VCE=10V , IC=20mA VCB=10V , , IC=7mA f=1GHZ V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE |S21e| fT NF 12 20 3 1 300 50 11.5 1.1 V V V µA µA dB GHZ dB Feed-back capacitance VCB=10V , IE=0 , f=1MHZ Cre 1.0 P F Typ 7 - Designed for low noise amplifier. Circuit Diagram Dimensions in inches and (millimeter) 1 2 3 General Purpose Transistor Tstg 120 0.55 2.0 2 Classification Of hFE 2SC3356Q-G 125-250 2SC3356S-G R25 SOT-23 0.122(3.10) 0.106(2.70) 0.059(1.50) 0.043(1.10) 0.079(2.00) 0.071(1.80) 0.039(1.00) Typ. 0.016(0.40) Typ. 0.004(0.10) Typ. 0.102(2.60) 0.087(2.20) 0.004(0.10) 0.014(0.35) 0.019(0.48) 0.001(0.02) Comchip Technology CO., LTD. |
Numéro de pièce similaire - 2SC3356S-G |
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Description similaire - 2SC3356S-G |
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