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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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TPS65290ZBRHFR Fiches technique(PDF) 4 Page - Texas Instruments |
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TPS65290ZBRHFR Fiches technique(HTML) 4 Page - Texas Instruments |
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4 / 56 page  4 TPS65290 SLVSBY5C – APRIL 2013 – REVISED MARCH 2016 www.ti.com Product Folder Links: TPS65290 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Pin Functions (continued) PIN I/O DESCRIPTION NAME NO. PWR_BB2 12 O Switch-controlled supply connected to the BB output. Decouple with a 1-µF ceramic capacitor. PWR_LDO1 7 O Switch-controlled supply connected to the LDO output. Decouple with a ceramic capacitor. PWR_LDO2 8 O Switch-controlled supply connected to the LDO output. Decouple with a ceramic capacitor. PWR_VIN 1 O Power for system output from VIN PWR_VMAX 3 O Switch-controlled supply connected to VMAX. Decouple with a ceramic capacitor. SCL/SCK 23 I Serial-data clock (SPI and I2C) VIN 2 I Battery supply VMAX 4 O This pin shows the maximum of VIN or VBB. Decouple with a 1-µF ceramic capacitor. VMICRO 10 O Microcontroller supply Thermal pad — — Connect the pad to AGND, PGND and PCB GND. The thermal pad does not have electrical connections to the IC. (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Input voltage BB_VIN, LDO_IN –0.3 7 V BB_EN, CE, CS, MOSI/SDA, SCL/SCK, VIN –0.3 5.5 Output voltage BB_LX1, BB_LX2 –1 7 V BB_OUT, PWR_BB2. PWR_VMAX –0.3 7 INT, LDO_OUT, MISO, PWR_BB1, PWR_LDO1, PWR_LDO2, PWR_VIN, VMAX, VMICRO –0.3 5.5 Ground AGND, PGND –0.3 0.3 V Operating junction temperature, TJ –40 125 °C Storage temperature, Tstg –55 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 |
Numéro de pièce similaire - TPS65290ZBRHFR |
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Description similaire - TPS65290ZBRHFR |
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