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J-SST111 Datasheet(Fiches technique) 1 Page - Linear Integrated Systems

Numéro de pièce J-SST111
Description  SINGLE N-CHANNEL JFET SWITCH
Télécharger  2 Pages
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Fabricant  LINEAR [Linear Integrated Systems]
Site Internet  http://www.linearsystems.com
Logo LINEAR - Linear Integrated Systems

J-SST111 Datasheet(HTML) 1 Page - Linear Integrated Systems

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Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20119 05/14/2014 Rev# A6 ECN# J SST 111
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
4ns
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation (J)3
360mW
Continuous Power Dissipation (SST)3
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-35V
Gate to Source
-35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
CHARACTERISTIC
TYP
J/SST111
J/SST112
J/SST113
UNIT
CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
BVGSS
Gate to Source Breakdown Voltage
-35
-35
-35
V
IG = -1µA, VDS = 0V
VGS(off)
Gate to Source Cutoff Voltage
-3
-10
-1
-5
-3
VDS = 5V, ID = 1µA
VGS(F)
Gate to Source Forward Voltage
0.7
IG = 1mA, VDS = 0V
IDSS
Drain to Source Saturation Current2
20
5
2
mA
VDS = 15V, VGS = 0V
IGSS
Gate Leakage Current
-0.005
-1
-1
-1
nA
VGS = -15V, VDS = 0V
IG
Gate Operating Current
-5
pA
VDG = 15V, ID = 1.0mA
ID(off)
Drain Cutoff Current
0.005
1
1
1
nA
VDS = 5V, VGS = -10V
rDS(on)
Drain to Source On Resistance
30
50
100
Ω
VGS = 0V, VDS = 0.1V
J/SST111 SERIES
SINGLE N-CHANNEL
JFET SWITCH
SST SERIES
SOT-23
TOP VIEW
J SERIES
TO-92
TOP VIEW
1
2
3
SOT-23
TOP VIEW
D
G
S


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