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CSD87355Q5DT Fiches technique(PDF) 11 Page - Texas Instruments |
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CSD87355Q5DT Fiches technique(HTML) 11 Page - Texas Instruments |
11 / 23 page PWM Driver Driver Switch Node Co Load RPCB CESR CINPUT CESL LDRAIN LDRAIN LSOURCE LSOURCE Control FET Sync FET Lo IL Input Supply CTOTAL 11 CSD87355Q5D www.ti.com SLPS575 – MARCH 2016 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Application Information (continued) The CSD87355Q5D is part of TI’s Power Block product family which is a highly optimized product for use in a synchronous buck topology requiring high current, high efficiency, and high frequency. It incorporates TI’s latest generation silicon which has been optimized for switching performance, as well as minimizing losses associated with QGD, QGS, and QRR. Furthermore, TI’s patented packaging technology has minimized losses by nearly eliminating parasitic elements between the Control FET and Sync FET connections (see Figure 28). A key challenge solved by TI’s patented packaging technology is the system level impact of Common Source Inductance (CSI). CSI greatly impedes the switching characteristics of any MOSFET which in turn increases switching losses and reduces system efficiency. As a result, the effects of CSI need to be considered during the MOSFET selection process. In addition, standard MOSFET switching loss equations used to predict system efficiency need to be modified in order to account for the effects of CSI. Further details behind the effects of CSI and modification of switching loss equations are outlined in TI’s Application Note SLPA009. Figure 28. The combination of TI’s latest generation silicon and optimized packaging technology has created a benchmarking solution that outperforms industry standard MOSFET chipsets of similar RDS(ON) and MOSFET chipsets with lower RDS(ON). Figure 29 and Figure 30 compare the efficiency and power loss performance of the CSD87355Q5D versus industry standard MOSFET chipsets commonly used in this type of application. This comparison purely focuses on the efficiency and generated loss of the power semiconductors only. The performance of CSD87355Q5D clearly highlights the importance of considering the Effective AC On-Impedance (ZDS(ON)) during the MOSFET selection process of any new design. Simply normalizing to traditional MOSFET RDS(ON) specifications is not an indicator of the actual in-circuit performance when using TI’s Power Block technology. |
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