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CSD87355Q5DT Fiches technique(PDF) 11 Page - Texas Instruments

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No de pièce CSD87355Q5DT
Description  Synchronous Buck NexFET Power Block
Download  23 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD87355Q5DT Fiches technique(HTML) 11 Page - Texas Instruments

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background image
PWM
Driver
Driver
Switch
Node
Co
Load
RPCB
CESR
CINPUT
CESL
LDRAIN
LDRAIN
LSOURCE
LSOURCE
Control
FET
Sync
FET
Lo
IL
Input
Supply
CTOTAL
11
CSD87355Q5D
www.ti.com
SLPS575 – MARCH 2016
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Application Information (continued)
The CSD87355Q5D is part of TI’s Power Block product family which is a highly optimized product for use in a
synchronous buck topology requiring high current, high efficiency, and high frequency. It incorporates TI’s latest
generation silicon which has been optimized for switching performance, as well as minimizing losses associated
with QGD, QGS, and QRR. Furthermore, TI’s patented packaging technology has minimized losses by nearly
eliminating parasitic elements between the Control FET and Sync FET connections (see Figure 28). A key
challenge solved by TI’s patented packaging technology is the system level impact of Common Source
Inductance (CSI). CSI greatly impedes the switching characteristics of any MOSFET which in turn increases
switching losses and reduces system efficiency. As a result, the effects of CSI need to be considered during the
MOSFET selection process. In addition, standard MOSFET switching loss equations used to predict system
efficiency need to be modified in order to account for the effects of CSI. Further details behind the effects of CSI
and modification of switching loss equations are outlined in TI’s Application Note SLPA009.
Figure 28.
The combination of TI’s latest generation silicon and optimized packaging technology has created a
benchmarking solution that outperforms industry standard MOSFET chipsets of similar RDS(ON) and MOSFET
chipsets with lower RDS(ON). Figure 29 and Figure 30 compare the efficiency and power loss performance of the
CSD87355Q5D versus industry standard MOSFET chipsets commonly used in this type of application. This
comparison purely focuses on the efficiency and generated loss of the power semiconductors only. The
performance of CSD87355Q5D clearly highlights the importance of considering the Effective AC On-Impedance
(ZDS(ON)) during the MOSFET selection process of any new design. Simply normalizing to traditional MOSFET
RDS(ON) specifications is not an indicator of the actual in-circuit performance when using TI’s Power Block
technology.


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