SPI42N03S2L-13 datasheet(6/10 Pages) INFINEON

No de pièce	SPI42N03S2L-13

Description	OptiMOS Power-Transistor

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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SPI42N03S2L-13

SPP42N03S2L-13

SPB42N03S2L-13

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=21 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS

parameter: I D

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)

parameter: T j

typ

98 %

0

5

10

15

20

25

30

-60

-20

20

60

100

140

180

T j [°C]

37 µA

800 µA

0

0.5

1

1.5

2

2.5

-60

-20

20

60

100

140

180

T j [°C]

Ciss

Coss

Crss

10

4

10

3

10

2

10

100

1000

10000

0

5

10

15

20

25

30

V DS [V]

25 °C

175 °C

25°C 98%

175°C 98%

1

10

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V SD [V]

Rev. 2.0

page 6

2004-06-04

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SPI42N03S2L-13 Fiches technique(PDF) 6 Page - Infineon Technologies AG

SPI42N03S2L-13 Fiches technique(HTML) 6 Page - Infineon Technologies AG

Numéro de pièce similaire - SPI42N03S2L-13

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