IRF3708L datasheet(6/10 Pages) KERSEMI

No de pièce	IRF3708L

Description	SMPS MOSFET

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Fabricant	KERSEMI [Kersemi Electronic Co., Ltd.]

Site Internet	http://www.kersemi.com

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6 / 10 page

Fig 14a&b. Gate Charge Test Circuit

and Waveform

Fig 12. On-Resistance Vs. Drain Current

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

VGS

QG

QGS

QGD

VG

Charge

t p

V (BR )DS S

I AS

R G

IAS

0.0 1

Ω

tp

D.U .T

L

VDS

+

-

VDD

DRIVER

A

15V

20 V

0

50

100

150

200

250

300

ID , Drain Current ( A )

0.005

0.010

0.015

0.020

0.025

VGS = 4.5V

VGS = 10V

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

VGS, Gate -to -Source Voltage (V)

0.007

0.009

0.011

0.013

0.015

0.017

ID = 31A

25

50

75

100

125

150

175

0

120

240

360

480

600

Starting T , Junction Temperature ( C)

J

°

ID

TOP

BOTTOM

10A

20.7A

24.8A

Fig 13. On-Resistance Vs. Gate Voltage

IRF3708L

2014-8-13

www.kersemi.com

6

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